? semiconductor components industries, llc, 2015 july, 2015 ? rev. 0 1 publication order number: nst65011mw6/d nst65011mw6 dual matched general purpose transistor npn matched pair these transistors are housed in an ultra?small sot?363 package ideally suited for portable products. they are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. applications are current mirrors; differential, sense and balanced amplifiers; mixers; detectors and limiters. complementary pnp equivalent nst65010mw6t1g is available. features ? current gain matching to 10% ? base?emitter v oltage matched to 2 mv ? drop?in replacement for standard device ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ?emitter voltage v ceo 65 v collector ?base voltage v cbo 80 v emitter ?base voltage v ebo 6.0 v collector current ? continuous i c 100 madc stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit total device dissipation per device fr? 5 board (note 1) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw/ c thermal resistance, junction to ambient r ja 328 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in sot?363 case 419b style 1 q 1 (1) (2) (3) (4) (5) (6) q 2 www. onsemi.com device package shipping ? ordering information NST65011MW6T1G sot?363 (pb?free) 3,000 / tape & reel ? for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification s brochure, brd8011/d. marking diagrams 2g = device code m = date code = pb?free package (note: microdot may be in either location) 2g m nsvt65011mw6t1g sot?363 (pb?free) 3,000 / tape & reel
nst65011mw6 www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage, (i c = 10 ma) v (br)ceo 65 ? ? v collector ?emitter breakdown voltage, (i c = 10 a, v eb = 0) v (br)ces 80 ? ? v collector ?base breakdown voltage, (i c = 10 a) v (br)cbo 80 ? ? v emitter ?base breakdown voltage, (i e = 1.0 a) v (br)ebo 6.0 ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain (i c = 10 a, v ce = 5.0 v) (i c = 2.0 ma, v ce = 5.0 v) (i c = 2.0 ma, v ce = 5.0 v) (note 2) h fe h fe(1)/ h fe(2) 150 200 0.9 ? 300 1.0 ? 500 1.1 ? collector ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 250 600 mv base ?emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v be(sat) 700 850 750 890 800 950 mv base ?emitter on voltage (i c = 2.0 ma, v ce = 5.0 v) (i c = 10 ma, v ce = 5.0 v) (i c = 2.0 ma, v ce = 5.0 v) (note 3) v be(on) v be(1) ? v be(2) 580 ? ? 660 ? 1.0 700 770 2.0 mv small? signal characteristics current ?gain ? bandwidth product, (i c = 10 ma, v ce = 5 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance, (v cb = 10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure, (i c = 0.2 ma, v ce = 5 vdc, r s = 2 k , f = 1 khz, bw = 200hz) nf ? ? 10 db product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. h fe(1) /h fe(2) is the ratio of one transistor compared to the other transistor within the same package. the smaller h fe is used as numerator. 3. v be(1) ? v be(2) is the absolute difference of one transistor compared to the other transistor within the same package.
nst65011mw6 www. onsemi.com 3 typical characteristics figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. ?saturation? and ?on? voltages i c , collector current (madc) 0.2 0.5 1.0 10 20 50 0.2 100 figure 3. collector saturation region i b , base current (ma) figure 4. base?emitter temperature coefficient i c , collector current (ma) 2.0 5.0 200 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.5 1.0 10 20 50 2.0 100 70 30 7.0 5.0 3.0 0.7 0.3 0.1 0.2 1.0 10 100 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. current?gain ? bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib
nst65011mw6 www. onsemi.com 4 typical characteristics figure 7. active region safe operating area v ce , collector-emitter voltage (v) 200 1.0 i c , collector current (ma) t a = 25 c bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c 100 50 10 5.0 2.0 5.0 10 30 45 65 100 1 s the safe operating area curves indicate i c ?v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 7 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions.
nst65011mw6 www. onsemi.com 5 package dimensions sc?88 (sot?363) case 419b?02 issue y style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protru- sions, or gate burrs shall not exceed 0.20 per end. 4. dimensions d and e1 at the outermost extremes of the plastic body and datum h. 5. datums a and b are determined at datum h. 6. dimensions b and c apply to the flat section of the lead between 0.08 and 0.15 from the tip. 7. dimension b does not include dambar protrusion. allowable dambar protrusion shall be 0.08 total in excess of dimension b at maximum material condi- tion. the dambar cannot be located on the lower radius of the foot. c ddd m 123 a1 a c 654 e b 6x dim min nom max millimeters a ??? ??? 1.10 a1 0.00 ??? 0.10 ddd b 0.15 0.20 0.25 c 0.08 0.15 0.22 d 1.80 2.00 2.20 ??? ??? 0.043 0.000 ??? 0.004 0.006 0.008 0.010 0.003 0.006 0.009 0.070 0.078 0.086 min nom max inches 0.10 0.004 e1 1.15 1.25 1.35 e 0.65 bsc l 0.26 0.36 0.46 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.010 0.014 0.018 0.078 0.082 0.086 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.65 0.66 6x dimensions: millimeters 0.30 pitch 2.50 6x recommended top view side view end view bbb h b seating plane detail a e a2 0.70 0.90 1.00 0.027 0.035 0.039 l2 0.15 bsc 0.006 bsc aaa 0.15 0.006 bbb 0.30 0.012 ccc 0.10 0.004 a-b d aaa c 2x 3 tips d e1 d e a 2x aaa h d 2x d l plane detail a h gage l2 c ccc c a2 6x on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nst65011mw6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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